IndiumV3, Main, Repository, bibRecord, 000D75

Electron energy loss near edge structure of InxAl1-xN alloys : Emerging materials and processes for nanoelectronics and sensors

Identifieur interne : 000D75 ( Main/Repository ); précédent : 000D74; suivant : 000D76

Electron energy loss near edge structure of InxAl1-xN alloys : Emerging materials and processes for nanoelectronics and sensors

Auteurs : RBID : Pascal:13-0348237

Descripteurs français

Pascal (Inist)
- Perte énergie électron, Spectre perte énergie électron, Méthode fonctionnelle densité, Implémentation, Codage, Structure électronique, Structure fine, Ionisation, Contamination, Méthode MOVPE, Défaut, Emission latérale, Propriété électronique, Indium, Nitrure d'aluminium, Composé binaire, Oxygène, Fabrication microélectronique, 7115M, 7322, 7321, 8540H, AlN.
Wicri :
- concept : Codage, Oxygène.

English descriptors

KwdEn :
- Aluminium nitride, Binary compounds, Contamination, Defects, Density functional method, Edge emission, Electron energy loss, Electron energy loss spectra, Electronic properties, Electronic structure, Encoding, Fine structure, Implementation, Indium, Ionization, MOVPE method, Microelectronic fabrication, Oxygen.

Abstract

We present a systematic computational study of electron energy loss near edge structure (ELNES) spectra of the N-K edge of In_xAl_1-xN with various indium contents. Density functional theory calculations are implemented by means of WIEN2k code. Supercell size as well as core-hole effects are investigated in order to establish the optimum parameters. Based on the known electronic structure of bulk wurtzite AlN, the fine structure of N-K ionization edge is investigated in order to study the effect of Indium in the electronic structure and the bonding environment of Nitrogen in InAlN alloys. The unintentional oxygen contamination in MOVPE In_0.24Al_0.76N and the variation of the indium content on defected areas of the structure are investigated.

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Pascal:13-0348237

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electron energy loss near edge structure of In<sub>x</sub>
Al<sub>1-x</sub>
N alloys : Emerging materials and processes for nanoelectronics and sensors</title>
<author><name sortKey="Soumelidou, M M" uniqKey="Soumelidou M">M. M. Soumelidou</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
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<country>Grèce</country>
<wicri:noRegion>54124 Thessaloniki</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kioseoglou, J" uniqKey="Kioseoglou J">J. Kioseoglou</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
<s3>GRC</s3>
<sZ>1 aut.</sZ>
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<wicri:noRegion>54124 Thessaloniki</wicri:noRegion>
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</author>
<author><name sortKey="Kirmse, H" uniqKey="Kirmse H">H. Kirmse</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institute of Physics, Humboldt University of Berlin</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Karakostas, Th" uniqKey="Karakostas T">Th. Karakostas</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
<s3>GRC</s3>
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<country>Grèce</country>
<wicri:noRegion>54124 Thessaloniki</wicri:noRegion>
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<author><name sortKey="Komninou, Ph" uniqKey="Komninou P">Ph. Komninou</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
<s3>GRC</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Grèce</country>
<wicri:noRegion>54124 Thessaloniki</wicri:noRegion>
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</titleStmt>
<publicationStmt><idno type="inist">13-0348237</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0348237 INIST</idno>
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<seriesStmt><idno type="ISSN">0167-9317</idno>
<title level="j" type="abbreviated">Microelectron. eng.</title>
<title level="j" type="main">Microelectronic engineering</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium nitride</term>
<term>Binary compounds</term>
<term>Contamination</term>
<term>Defects</term>
<term>Density functional method</term>
<term>Edge emission</term>
<term>Electron energy loss</term>
<term>Electron energy loss spectra</term>
<term>Electronic properties</term>
<term>Electronic structure</term>
<term>Encoding</term>
<term>Fine structure</term>
<term>Implementation</term>
<term>Indium</term>
<term>Ionization</term>
<term>MOVPE method</term>
<term>Microelectronic fabrication</term>
<term>Oxygen</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Perte énergie électron</term>
<term>Spectre perte énergie électron</term>
<term>Méthode fonctionnelle densité</term>
<term>Implémentation</term>
<term>Codage</term>
<term>Structure électronique</term>
<term>Structure fine</term>
<term>Ionisation</term>
<term>Contamination</term>
<term>Méthode MOVPE</term>
<term>Défaut</term>
<term>Emission latérale</term>
<term>Propriété électronique</term>
<term>Indium</term>
<term>Nitrure d'aluminium</term>
<term>Composé binaire</term>
<term>Oxygène</term>
<term>Fabrication microélectronique</term>
<term>7115M</term>
<term>7322</term>
<term>7321</term>
<term>8540H</term>
<term>AlN</term>
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<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Codage</term>
<term>Oxygène</term>
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<front><div type="abstract" xml:lang="en">We present a systematic computational study of electron energy loss near edge structure (ELNES) spectra of the N-K edge of In<sub>x</sub>
Al<sub>1-x</sub>
N with various indium contents. Density functional theory calculations are implemented by means of WIEN2k code. Supercell size as well as core-hole effects are investigated in order to establish the optimum parameters. Based on the known electronic structure of bulk wurtzite AlN, the fine structure of N-K ionization edge is investigated in order to study the effect of Indium in the electronic structure and the bonding environment of Nitrogen in InAlN alloys. The unintentional oxygen contamination in MOVPE In<sub>0.24</sub>
Al<sub>0.76</sub>
N and the variation of the indium content on defected areas of the structure are investigated.</div>
</front>
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N alloys : Emerging materials and processes for nanoelectronics and sensors</s1>
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<sZ>2 aut.</sZ>
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<fA14 i1="02"><s1>Institute of Physics, Humboldt University of Berlin</s1>
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<fC01 i1="01" l="ENG"><s0>We present a systematic computational study of electron energy loss near edge structure (ELNES) spectra of the N-K edge of In<sub>x</sub>
Al<sub>1-x</sub>
N with various indium contents. Density functional theory calculations are implemented by means of WIEN2k code. Supercell size as well as core-hole effects are investigated in order to establish the optimum parameters. Based on the known electronic structure of bulk wurtzite AlN, the fine structure of N-K ionization edge is investigated in order to study the effect of Indium in the electronic structure and the bonding environment of Nitrogen in InAlN alloys. The unintentional oxygen contamination in MOVPE In<sub>0.24</sub>
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N and the variation of the indium content on defected areas of the structure are investigated.</s0>
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<s5>23</s5>
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<s5>23</s5>
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<s5>23</s5>
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<s5>57</s5>
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<s5>59</s5>
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Electron energy loss near edge structure of InxAl1-xN alloys : Emerging materials and processes for nanoelectronics and sensors

Electron energy loss near edge structure of InxAl1-xN alloys : Emerging materials and processes for nanoelectronics and sensors

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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